Professor

Director of Carl and Emily Fuchs Institute for Microelectronics

Holder of the Carl and Emily Fuchs chair in Microelectronics

B.Eng(Pret)

M.Eng(Pret)

D.Eng(Pret)

B.A.(UNISA)

B.Com(UNISA)

B.Com(Hons)(UNISA)

Registered Professional Engineer

Pr.Eng, SMIEEE

CEFIM building 2-5

Main Campus

University of Pretoria

Cnr Lynnwood and University Roads

Department of Electrical, Electronic & Computer Engineering

University of Pretoria

Pretoria

South Africa

0002

Telephone +27 12 420-2952 (intl) 012 420-2952 (loc)

Fax: Faks: +27 12 362-5115 (intl) 012 362-5115 (loc)



E-mail: E-pos: mplessis@postino.up.ac.za

Microelectronics, optoelectronics and CMOS design

Analog IC Design, Silicon LED's

Electronic Components ELK220

Analog Electronics ENE310

Electronics EEE 780 · Integrated Analog Design EEA 780

Publications: Scientific Journal Publications L.W. Snyman, M. du Plessis and H. Aharoni: “Quantum efficiency of Si CMOS n+pp+ LED’s as a function of current density”, IEEE Photonics Technology Letters, Vol.17, No.10, pp.2041-2043, October 2005.

M. du Plessis, H. Aharoni and L.W. Snyman: “Two- and multi-terminal CMOS/BiCMOS Si LED’s.” Optical Materials, Vol. 27, Issue 5, pp.1059-1063, February 2005.

M. du Plessis, H. Aharoni and L.W. Snyman: “Two- and multi-terminal silicon light emitting devices in standard CMOS/BiCMOS IC technology”, Physica Status Solidi (a), Vol. 201, No. 10, pp. 2225-2233, July 2004.

H. Aharoni and M. du Plessis: “Low operating voltage integrated silicon light emitting devices.” IEEE Journal of Quantum Electronics, Vol. 40, Issue 5, pp.557-563, May 2004.

L.W. Snyman, H. Aharoni and M. du Plessis: “Higher efficiency silicon CMOS light emitting devices (450nm-750nm) using current density confinement and carrier injection techniques.” Proceedings of the Optoelectronic Integration on Silicon III Conference 5730, SPIE Photonic Integration Conference, pp.59-72, San Jose, USA, 25-26 January 2005.

M. du Plessis and C. Conradie: “Porous silicon nano-explosive devices”, Accepted for publication in the Proceedings of the SPIE International Conference on Microelectronics, MEMS and Nanotechnology, Brisbane, Australia, 11-14 December 2005.

M. du Plessis and C. Conradie: (Invited paper) “Nano-explosions in silicon.” Proceedings of the 12th International IEEE Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2005, pp.721-726, Kraków, Poland, 22-25 June 2005.

M. du Plessis, L.W. Snyman and H. Aharoni: “Low voltage light emitting devices in silicon IC technology.” Proceedings of the IEEE International Symposium on Industrial Electronics - ISIE 2005, pp.1145-1149, Dubrovnik, Croatia, 20-23 June 2005.

L.W. Snyman, H. Aharoni and M. du Plessis: “Optoelectronic device with separately controllable carrier injection means.” USA patent 6,111,271 (Granted 29 August 2000.

L.W. Snyman, H. Aharoni and M. du Plessis: “Indirect bandgap semiconductor optoelectronic device.” USA patent 5,944,720 (Granted 30 November 1999).

E. Seevinck and M. du Plessis: “Amplifier with active-bootstrapped gain-enhancement technique.” Approved USA patent application, Appl. No. 859801 (Filed 19 May, 1997)